epitaxy - транскрипция, произношение и перевод онлайн

Транскрипция и произношение слова "epitaxy" в британском и американском вариантах. Подробный перевод и примеры.

epitaxy / эпитаксии
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Перевод
существительное
эпитаксия
mbe
прилагательное
эпитаксиальный
epitaxial
Определения
имя существительное
the natural or artificial growth of crystals on a crystalline substrate determining their orientation.
Maintaining tight control over layer thickness throughout the lengthy low-pressure metalorganic vapor phase epitaxy growth process is one of the biggest challenges.
Примеры
Using a molecular beam epitaxy chamber, scientists spray paint a surface with atoms under high temperatures, creating an atomic coating.
Then, because the fluorite crystals that are defined by dark color zoning are wedge shaped and depart from parallelism with pyrite crystals by varying degrees, I concluded that epitaxy did not appear possible.
The process is relatively simple for manufacturing compared with techniques such as molecular beam epitaxy .
To build the 0.5-mm x 0.3-mm x 0.1-mm laser chip, the group deposited various layers onto the SiC substrate using metal-oxide vapor phase epitaxy .
Maintaining tight control over layer thickness throughout the lengthy low-pressure metalorganic vapor phase epitaxy growth process is one of the biggest challenges.
Amorphous, polycrystalline, or epitaxial films can be made with thicknesses from 10 nanometers to hundreds of nanometers or thicker.
A particular feature of this new process is that the N type epitaxial layer that is grown over the P + layer is only about half the thickness of its counterpart in the conventional device.
It is plausible that the solid glass support, which is not flat on the molecular scale, will cause epitaxial coupling that affects the overlaying lipid molecules.
An assistant professor in the applied physics and physics departments at Yale University has been recognized for ‘pioneering work on epitaxial complex oxide thin film heterostructures.’
In prior strained silicon technologies, the silicon film is stressed through its epitaxial growth onto a relaxed silicon-germanium layer.